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| Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 40N50Q IXFT 40N50Q VDSS = 500 V = 40 A ID25 RDS(on) = 0.14 trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 30 40 40 160 40 50 2.0 20 500 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 4.5 100 TJ = 25C TJ = 125C 25 1 0.14 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved DS99002A(04/03) IXFH 40N50Q IXFT 40N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 35 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 700 180 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.0 (External), 20 56 14 130 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 26 58 0.25 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 P Q R S Dim. Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 * ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 160 1.5 250 A A V ns C A TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 1.0 10 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 40N50Q IXFT 40N50Q Fig. 1. Output Characteristics @ 25 Deg. C 40 35 30 VG S = 10V 7V 6V 90 80 70 VG S = 10V Fig. 2. Extended Output Characteristics @ 25 deg. C I D - Amperes 25 20 1 5 1 0 5 0 0 1 2 5V I D - Amperes 60 50 40 30 20 1 0 0 7V 6V 5V V DS - Volts 3 4 5 6 7 0 3 6 9 1 2 1 5 1 8 21 V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 40 35 30 VG S = 10V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 2.8 2.5 VG S = 10V R S (on) - Normalized D 2.2 1 .9 1 .6 1 .3 1 0.7 0.4 I D = 40A I D = 20A I D - Amperes 25 20 1 5 1 0 5 0 0 3 6 9 1 2 1 5 5V -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID25 Value vs. ID 3.1 2.8 VG S = 10V 50 Fig. 6. Drain Current vs. Case Temperature R S (on) - Normalized D 2.5 2.2 1 .9 1 .6 1 .3 1 0.7 0 1 0 20 30 40 50 60 70 80 T J = 25 C 40 I D - Amperes T J = 125 C 30 20 1 0 0 -50 -25 0 25 50 75 1 00 1 25 1 50 I D - Amperes TC - Degrees Centigrade (c) 2003 IXYS All rights reserved IXFH 40N50Q IXFT 40N50Q Fig. 7. Input Admittance 80 70 60 50 40 30 20 1 0 0 3.5 4 4.5 5 5.5 6 6.5 7 T J = 120 C 25 C -40 C 70 60 Fig. 8. Transconductance T J = -40 C 25 C 125 C g f s - Siemens I D - Amperes 50 40 30 20 1 0 0 0 10 20 30 40 50 60 70 80 V GS - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 1 20 1 00 1 0 Fig. 10. Gate Charge VD S = 250V I D = 20A I G = 10mA 8 I S - Amperes VG S - Volts T J = 25 C 80 60 T J = 125 C 40 20 0 0.4 0.6 0.8 1 1 .2 6 4 2 0 0 20 40 60 80 1 00 1 20 1 40 V SD - Volts Q G - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz 1 Fig. 12. Maximum Transient Thermal Resistance Capacitance - pF 1 000 C oss R (th) J C - (C/W ) 25 30 35 40 C iss 0.1 C rss 1 00 0 5 1 0 1 5 0.01 20 1 1 0 1 00 1 000 V DS - Volts Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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